污水處理設備 污泥處理設備 水處理過濾器 軟化水設備/除鹽設備 純凈水設備 消毒設備|加藥設備 供水/儲水/集水/排水/輔助 水處理膜 過濾器濾芯 水處理濾料 水處理劑 水處理填料 其它水處理設備
上海巨納科技有限公司
上海巨納科技有限公司
| 參 考 價 | 面議 |
產(chǎn)品型號
品 牌
廠商性質(zhì)其他
所 在 地上海
聯(lián)系方式：袁文軍查看聯(lián)系方式
更新時間：2024-02-14 14:05:33瀏覽次數(shù)：89次
聯(lián)系我時，請告知來自 環(huán)保在線暫無信息 |
簡要描述：2H semiconducting phase of MoTe2 crystals contain layers that are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
2H semiconducting phase of MoTe2 crystals contain layers that are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our large size 2H-MoTe2 vdW crystals are treated as gold standards in 2D materials field. They come with guaranteed valleytronic performance, clean PL spectrum, perfect crystallization, and defect free structure. Our MoTe2 crystals are synthesized two different methods (flux zone and chemical vapor transport). While flux zone provides extremely clean MoTe2 crystals, CVT method often introduces halide contaminants. For comparison between these tow methods, please see the information below. If your research needs electronically doped MoTe2 crystals, please contact us.
Characteristics of 2H-MoTe2 crystals from 2Dsemiconductors USA
Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.
Partial List of Publications Using This Product
Y. Li et. al. "Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity"
Nature Nanotechnology volume 12, pages 987–992 (2017)
Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers, Phys. Rev. Lett. 117, 187401 (2016)
Tony Heinz Team "Optical Properties and Bａnd Gap of Single- and Few-Layer MoTe2 Crystals" Nano Letters 2014, 14, 6231−6236
Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2; Q. J. Song, Q. H. Tan, X. Zhang, J. B. Wu, B. W. Sheng, Y. Wan, X. Q. Wang, L. Dai, and P. H. Tan; Phys. Rev. B 93, 115409 (2016)
Indirect-to-Direct Bａnd Gap Crossover in Few-Layer MoTe2; Ignacio Gutiérrez Lezama et. al. Nano Letters 2015, 15 (4), pp 2336–2342 DOI: 10.1021/nl5045007
Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. Heinz; Phys. Rev. B 90, 205422 (2014)
M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929
H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)
S. Vishwanath et. al. "MBE growth of few-layer 2H-MoTe2 on 3D substrates" Journal of Crystal Growth, 482, Pages 61-69 (2018)
您感興趣的產(chǎn)品PRODUCTS YOU ARE INTERESTED IN
環(huán)保在線 設計制作，未經(jīng)允許翻錄必究 .? ? ?
請輸入賬號
請輸入密碼
請輸驗證碼
